Method of manufacturing chip-stacked semiconductor package

ABSTRACT

A method of manufacturing a chip-stacked semiconductor package, the method including preparing a base wafer including a plurality of first chips each having a through-silicon via (TSV); bonding the base wafer including the plurality of first chips to a supporting carrier; preparing a plurality of second chips; forming stacked chips by bonding the plurality of second chips to the plurality of first chips; sealing the stacked chips with a sealing portion; and separating the stacked chips from each other.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation application of U.S. patentapplication Ser. No. 13/439,447 filed Apr. 4, 2012, which claims thebenefit of Korean patent application serial number 10-2011-0041543,filed May 2, 2011, the entire disclosures of which are incorporated byreference herein in their entireties.

TECHNICAL FIELD

The inventive concept relates to a method of manufacturing asemiconductor package, and more particularly, to a method ofmanufacturing a chip-stacked semiconductor package in which a pluralityof chips are stacked.

The semiconductor industry pursues manufacturing small-sized,multifunctional, and high-capacity semiconductor products having highreliability at a low cost. Semiconductor packaging technology is animportant technology enabling achievement of such complex goals. Asemiconductor packaging technology is herein provided for achieving thecomplex goals stated above. The technology provides a semiconductorpackage in which a plurality of chips are stacked.

SUMMARY

The inventive concept provides a method of manufacturing a chip-stackedsemiconductor package that is small in size, has high functionality, andhigh capacity due to the stacking of a plurality of chips.

In an embodiment of the inventive concept, a method of manufacturing achip-stacked semiconductor package is provided, the method includespreparing or providing a base wafer including a plurality of first chipseach having a through-silicon via (TSV); bonding the base waferincluding the plurality of first chips to a supporting carrier;preparing or providing a plurality of second chips; forming stackedchips by bonding the plurality of second chips to the plurality of firstchips; sealing the stacked chips with a sealing portion; and separatingthe stacked chips from each other.

In an embodiment, of the inventive concept, the preparation of the basewafer may include forming an integrated circuit layer on a first surfaceof a semiconductor substrate having a first surface and a secondsurface; forming an interlayer insulation layer covering the integratedcircuit layer on the first surface; forming the TSV extending in thesemiconductor substrate through the interlayer insulation layer; formingan inter-metallic insulation layer including a multilayerinterconnection pattern connected to the TSV on the interlayerinsulation layer; forming a first connection unit electrically connectedto the multilayer interconnection pattern on the inter-metallicinsulation layer; exposing the TSV to the second surface; and forming aprotection layer and a conductive pad connected to the TSV on the secondsurface, wherein, in the bonding of the base wafer, the first connectionunit of the first chip may face the supporting carrier.

In an embodiment, the preparation of the base wafer may further includebonding a non-conductive film (NCF) or an anisotropic conductive film(ACF) to the protection layer and the conductive pad, after forming theconductive pad, and the forming of the stacked chips may include bondingthe plurality of second chips to the plurality of first chips throughthe NCF or the ACF.

In an embodiment, the plurality of second chips may be of the same kindof chips as the plurality of first chips.

In an embodiment, each of the plurality of second chips may include asecond connection unit electrically connected to an integrated circuitlayer thereof, wherein, in the forming of the stacked chips, the secondconnection unit may be electrically connected to the TSV.

In an embodiment, the method may further include, before the sealing ofthe stacked chips, filling a connection portion between the first chipsand the second chips with an underfill.

In an embodiment, the plurality of second chips may be bonded to theplurality of first chips, at least two second chips are stacked on onefirst chip so that stacked chips comprise at least three chips.

In an embodiment, the method may further include, before the separatingof the stacked chips, exposing upper surfaces of the second chips bygrinding an upper portion of the sealing portion.

In an embodiment, the method may further include: after the exposing ofthe upper surfaces of the second chips, removing the supporting carrier;bonding a supporting substrate to the upper portion of the sealingportion; and performing an electrical die sort (EDS) test for thestacked chips.

In an embodiment, the method may further include: after the separatingof the stacked chips, removing the supporting substrate; and mounting aseparated stacked chip on a main chip. A second TSV and a thirdconnection unit connected to the second TSV may be formed in the mainchip, and the main chip may be mounted on a board substrate through thethird connection unit.

In an embodiment, of the inventive concept, there is provided a methodof manufacturing a chip-stacked semiconductor package, the methodincludes: preparing a base wafer including a plurality of first chipseach having a first size and a through-silicon via (TSV); bonding thebase wafer to a supporting carrier; preparing a plurality of secondchips each having a second size that is smaller than the first size;forming stacked chips by bonding the plurality of second chips to theplurality of first chips; sealing the stacked chips with a sealingportion; and separating the stacked chips from each other by sawing thebase wafer and the sealing portion.

In an embodiment, the sealing portion may be formed to cover aconnection portion between the first chips and the second chips andsides of the second chips.

In an embodiment, the base wafer and the sealing portion may be sawedbased on a size of the first chips and a sealing portion of sides of thesecond chips may be exposed.

In an embodiment, the base wafer and the sealing portion may be sawedbased on a size of the second chips and sides of the first and secondchips may be exposed.

BRIEF DESCRIPTION OF THE DRAWINGS

Exemplary embodiments of the inventive concept will be more clearlyunderstood from the following detailed description taken in conjunctionwith the accompanying drawings in which:

FIGS. 1 through 11 are cross-sectional views illustrating a method ofmanufacturing a chip-stacked semiconductor package according to anembodiment of the inventive concept;

FIGS. 12 and 13 are cross-sectional views illustrating a method ofmanufacturing a chip-stacked semiconductor package, according to anembodiment of the inventive concept;

FIGS. 14A through 14F are cross-sectional views illustrating a method ofmanufacturing a base wafer including a first chip used in a method ofmanufacturing a chip-stacked semiconductor package, according to anembodiments of the inventive concept;

FIG. 15 is a cross-sectional view of a base wafer including a first chipused in a method of manufacturing a chip-stacked semiconductor package,according to an embodiment of the inventive concept;

FIGS. 16A and 16B are cross-sectional views illustrating a method ofmanufacturing a second chip used in a method of manufacturing achip-stacked semiconductor package, according to an embodiment of theinventive concept;

FIGS. 17A and 17B are cross-sectional views illustrating a method ofmanufacturing a second chip used in a method of manufacturing achip-stacked semiconductor package, according to an embodiment of theinventive concept;

FIGS. 18 and 19 are cross-sectional views illustrating a method ofmanufacturing a chip-stacked semiconductor package, according to anembodiment of the inventive concept;

FIGS. 20 and 21 are cross-sectional views illustrating a method ofmanufacturing a chip-stacked semiconductor package, according to anembodiment of the inventive concept;

FIG. 22 is a cross-sectional view illustrating a method of manufacturinga chip-stacked semiconductor package, according to an embodiment of theinventive concept;

FIGS. 23 and 24 are each cross-sectional views of chip-stackedsemiconductor packages according to an embodiment of the inventiveconcept;

FIGS. 25 and 26 are each cross-sectional views of chip-stackedsemiconductor packages according to an embodiment of the inventiveconcept;

FIG. 27 is a schematic block diagram illustrating a memory cardincluding a chip-stacked semiconductor package according to anembodiment of the inventive concept; and

FIG. 28 is a schematic block diagram of a system including achip-stacked semiconductor package according to an embodiment of theinventive concept.

DETAILED DESCRIPTION OF THE EMBODIMENTS

Reference will now be made in detail to exemplary embodiments, examplesof which are illustrated in the accompanying drawings. However, theineventive concept is not limited to the embodiments illustratedhereinafter, on the contrary, the embodiments herein are introduced toprovide easy and complete understanding of the scope and spirit ofexemplary embodiments. In the drawings, thicknesses of layers andregions are exaggerated for clarity.

It will be understood that when an element, such as a layer, a region,or a substrate, is referred to as being “on,” “connected to” or “coupledto” another element, it may be directly on, connected or coupled to theother element or intervening elements may be present. In contrast, whenan element is referred to as being “directly on,” “directly connectedto” or “directly coupled to” another element or layer, there are nointervening elements or layers present. Like reference numerals refer tolike elements throughout. As used herein, the term “and/or” includes anyand all combinations of one or more of the associated listed items.

It will be understood that, although the terms first, second, third,etc., may be used herein to describe various elements, components,regions, layers and/or sections, these elements, components, regions,layers and/or sections should not be limited by these terms. These termsare only used to distinguish one element, component, region, layer orsection from another element, component, region, layer, or section.Thus, a first element, component, region, layer, or section discussedbelow could be termed a second element, component, region, layer, orsection without departing from the teachings of exemplary embodiments.

Spatially relative terms, such as “above,” “upper,” “beneath,” “below,”“lower,” and the like, may be used herein for ease of description todescribe one element or feature's relationship to another element(s) orfeature(s) as illustrated in the figures. It will be understood that thespatially relative terms are intended to encompass differentorientations of the device in use or operation in addition to theorientation depicted in the figures. For example, if the device in thefigures is turned over, elements described as “below” or “beneath” otherelements or features would then be oriented “above” the other elementsor features. Thus, the exemplary term “above” may encompass bothorientations of above and below. The device may be otherwise oriented(rotated 90 degrees or at other orientations) and the spatially relativedescriptors used herein interpreted accordingly.

The terminology used herein is for the purpose of describing exemplaryembodiments only and is not intended to be limiting of exemplaryembodiments. As used herein, the singular forms “a”, “an”, and “the” areintended to include the plural forms as well, unless the context clearlyindicates otherwise. It will be further understood that the terms“comprises” and/or “comprising” when used in this specification, specifythe presence of stated features, integers, steps, operations, elements,and/or components, but do not preclude the presence or addition of oneor more other features, integers, steps, operations, elements,components, and/or groups thereof.

Exemplary embodiments are described herein with reference tocross-sectional illustrations that are schematic illustrations ofexemplary embodiments (and intermediate structures). As such, variationsfrom the shapes of the illustrations as a result, for example, ofmanufacturing techniques and/or tolerances, are to be expected. Thus,exemplary embodiments should not be construed as limited to theparticular shapes of regions illustrated herein but may includedeviations in shapes that result, for example, from manufacturing.Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which exemplary embodiments belong. Itwill be further understood that terms, such as those defined in commonlyused dictionaries, should be interpreted as having a meaning that isconsistent with their meaning in the context of the relevant art andwill not be interpreted in an idealized or overly formal sense unlessexpressly so defined herein.

FIGS. 1 through 11 are cross-sectional views illustrating a method ofmanufacturing a chip-stacked semiconductor package according to anembodiment of the inventive concept.

Referring to FIG. 1, a base wafer 10, including a plurality of chips,namely, first chips 100, each in which at least one through-silicon via(TSV) 130 is formed, is prepared. In the base wafer 10, the plurality offirst chips 100, including the TSV 130, are simultaneously formed at awafer level.

In the base wafer 10, a size of a chip region is indicated as “CR1”. Thesize CR1 of a chip region may be defined by a CR1-width and aCR1-length. The width of a scribe line region between the first chips100 is indicated as “SR1”. The scribe line region may be oriented alonga width or a length of the chip region CR1.

The first chips 100 are next separated by a sawing process and arelabeled as “CS1” in FIG. 1. The lines CS1 of the first chips 100 may bealong a width or a length of CR1. The width of the region sawed by ablade in the scribe line region in the sawing process is illustrated as“S1”. The size S1 of a region sawed by the blade may be along a width ora length of CR1. The size S1 of a region sawed by the blade may be awidth of the blade. Although, in FIG. 1, three first chips 100 areillustrated in the base wafer 10 for convenience of description, dozensor even hundreds of chips may be formed in the base wafer 10.

The base wafer 10 may include a body layer 110, a lower insulation layer120, the TSV 130, a first connection unit 140, a protection layer 160,and an upper pad 170. The body layer 110 may include a silicon substrate(not shown), an integrated circuit layer formed on the siliconsubstrate, and an interlayer insulation layer (not shown) covering theintegrated circuit layer. The lower insulation layer 120 is formed underthe body layer 110 and may include an inter-metallic insulation layer122 and a passivation layer 124. A multi-level interconnection pattern(not shown) may be formed inside the inter-metallic insulation layer122.

The TSV 130 may be connected to the multi-level interconnection patternof the lower insulation layer 120 through the body layer 110. The firstconnection unit 140 may include a bump pad 142 and a bump 144. The bumppad 142 may be formed on the passivation layer 124 with conductivematerial, and may be electrically connected to the multi-levelinterconnection pattern of the lower insulation layer 120. Accordingly,the bump pad 142 may be electrically connected to the TSV 130 throughthe multi-level interconnection pattern of the lower insulation layer120.

An under bump metal (UBM) (not shown) may be formed on the bump pad 142.The bump pad 142 may be formed of a conductive material such as aluminum(Al), copper (Cu), or the like, and may be formed using a pulse platingmethod or a direct current plating method. However, the formation of thebump pad 142 is not limited to these pulse plating or direct currentplating methods.

In an embodiment, the bump 144 may be formed on the bump pad 142. Thebump 144 may be formed with a conductive material, for example, copper(Cu), aluminum (Al), gold (Au), solder, or the like. However, thecomposition of the bump 144 is not limited thereto. If the bump 144 isformed of solder, the bump 144 is called a solder bump. The protectionlayer 160 is formed on the upper surface of the body layer 110. Theprotection layer 160 may be formed of insulating material, and thus, mayprotect the body layer 110 from the outside. The protection layer 160may be formed of an oxide film, a nitride film, or a dual-layer filmincluding the oxide film and the nitride film. For instance, theprotection layer 160 may be formed of a silicon oxide (SiO₂) film, byusing a high density plasma-chemical vapor deposition (HDP-CVD) process.

In an embodiment, the upper pad 170 is formed on the protection layer160 and may be connected to the TSV 130. The upper pad 170 may be formedof aluminum, copper, or the like, similar to the bump pad 142. The basewafer 10 is described in more detail below.

Referring to FIG. 2, in an embodiment, a supporting carrier 800 isprepared. An adhesive layer 820 may be formed on the supporting carrier800. The supporting carrier 800 may be formed as a substrate thatincludes silicon, germanium, silicon-germanium, gallium-arsenic (GaAs),glass, plastic, ceramic, or the like. In an embodiment, the supportingcarrier 800 may be formed as a silicon substrate or a glass substrate.The adhesive layer 820 may be formed as a non-conductive film (NCF), ananisotropic conductive film (ACF), an ultraviolet (UV) film, an instantadhesive, a thermosetting adhesive, a laser-setting adhesive, anultrasonic-setting adhesive, a non-conductive paste (NCP), or the like.

The base wafer 10 is bonded to the supporting carrier 800 using theadhesive layer 820. The base wafer 10 may be bonded to the supportingcarrier 800 such that the first connection unit 140 faces the supportingcarrier 800. Before preparing the base wafer 10 or after preparing thebase wafer 10, the supporting carrier 800 may be prepared before bondingthe base wafer 10 to the supporting carrier 800.

Referring to FIG. 3, in an embodiment, a second chip 200 is prepared.The second chip 200 may include a body layer 210, a lower insulationlayer 220, and a second connection unit 240. Similar to the body layer110, the body layer 210 may include a silicon substrate (not shown), anintegrated circuit layer formed on the silicon substrate, and aninterlayer insulation layer (not shown) covering the integrated circuitlayer. The upper surface of the body layer 210 may be exposed to theoutside. The upper surface of the body layer 210 may be a second surfaceof the silicon substrate opposite to a first surface of the siliconsubstrate on which the integrated circuit layer is formed. Accordingly,silicon of the silicon substrate may be exposed to the outside. Ifdesired, a protection layer, as in the first chips 100, may be formed onthe second surface of the silicon substrate.

The lower insulation layer 220 is formed under the body layer 210 andmay include an inter-metallic insulation layer 222 and a passivationlayer 224. A multi-level interconnection pattern (not shown) may beformed inside the inter-metallic insulation layer 222.

The second connection unit 240 may include a bump pad 242 and a bump244. The bump pad 242 may be formed with conductive material on thepassivation layer 224, and may be electrically connected to themulti-level interconnection pattern of the lower insulation layer 220.An under bump metal (UBM) (not shown) may be formed on the bump pad 242.The bump pad 242 may be formed with the same material as or differentmaterial from that of the bump pad 142 of the first connection unit 140,and may be formed by the same method as or a different method from thatof forming the bump pad 142 of the first connection unit 140.

The bump 244 may be formed on the bump pad 242. The bump 244 is formedof conductive material, and may be formed of copper (Cu), aluminum (Al),gold (Au), solder, or the like, similar to the bump 144 of the firstconnection unit 140. However, the composition of bump 244 is not limitedthereto. In the second chip 200, in contrast to the first chips 100, aTSV that penetrates the body layer 210 may not be formed. Accordingly,an upper pad also may not be formed.

A stacked chip 1100 is formed by stacking the second chip 200 on each ofthe upper surfaces of the first chips 100. A stack may be formed bybonding the second connection unit 240 of the second chip 200 to theupper pad 170 of the first chip 100 by using a thermal pressing method.The second connection unit 240 of the second chip 200 may be connectedto the upper pad 170 of the first chip 100. Accordingly, the multi-levelinterconnection pattern of the second chip 200 may be electricallyconnected to the TSV 130 of the first chip 100 through the secondconnection unit 240 of the second chip 200.

If a position of the second connection unit 240 of the second chip 200corresponds to a position of the upper pad 170 of the first chip 100,the second chip 200 may be stacked on the first chip 100. The secondchip 200 may be a different kind of chip from the first chip 100.Alternatively, the second chip 200 may be the same kind of chip as thefirst chip 100.

The second chip 200 may be obtained by sawing the same base wafer 10illustrated in FIG. 1, wherein a TSV may not be formed in the secondchip 200. However, in contrast to the embodiment shown in FIG. 3, a TSVmay be formed in the second chip 200. The second chip 200 may be a chipobtained by separating it from the same base wafer 10 that originallyincluded the first chip 100.

The size of the second chip 200 is indicated as “CS2”. The size CS2 ofthe second chip 200 may be defined by a CS2 width or a CS2 length. Thesize CS2 of the second chip 200 is smaller than the size CS1 of thefirst chip 100. “S2” indicates a size of a region sawed by a bladeinside a scribe line region of a wafer (not shown) for the second chip200. The size S2 may be along a width or a length of CS2 and is widerthan the size S1. The size S2 may be a width of the blade. Because thesize CS2 of the second chip 200 is smaller than the size CS1 of thefirst chip 100 and the size S2 of a region sawed by the blade is largerthan the size S1, the underfill process (described below) and the sawingprocess may be easily performed.

Referring to FIG. 4, an underfill 310 for filling a connecting portionbetween the first chip 100 and the second chip 200 of the stacked chip1100 is formed. As stated above, by making the size CS2 of the secondchip 200 stacked on the first chip 100 smaller than the size CS1 of thefirst chip 100, the underfill process may be easily performed eventhough the size, for example, the width, of the scribe line region isnarrow in a highly integrated wafer. The underfill 310 may fill theconnecting portion between the first chip 100 and the second chip 200,i.e., a portion in which the upper pad 170 of the first chip 100 and thesecond connection unit 240 are connected to each other. The underfill310 may be formed with underfill resin such as epoxy resin, and mayinclude a silica filler, a flux, or the like. The underfill 310 may beformed of different material from that of a molding layer which isformed as described below. However, in an embodiment, the underfill 310may be formed of the same material as that of the molding layer.

As illustrated in FIG. 4, the underfill 310 may seal not only theconnecting portion between the first chip 100 and the second chip 200but also the sides of the second chip 200 and a portion of the uppersurface of the second chip 200, which extend from the connectingportion. That is, the underfill 310 may fill the connecting portionbetween the first chip 100 and the second chip 200, but, as illustratedin FIG. 4, the underfill 310 may be formed so as to cover the sides ofthe second chip 200. The underfill 310 may overlap with an adjacentunderfill. In this manner, if the underfill 310 covers the sides of thesecond chip 200, the sides of the underfill 310 may be exposed after asemiconductor package is completed. In the case of using a MUF (moldedunderfill) process, the underfill process in this step may be omitted.

Referring to FIG. 5, a molding layer 320 is formed to mold the stackedchip 1100 bonded to the supporting carrier 800. The molding layer 320may be formed of polymer such as a resin. For example, the molding layer320 may be formed of an epoxy molding compound (EMC). Accordingly, asealing portion 330, including the underfill 310 and the molding layer320, is formed on the stacked chip 1100. The sealing portion 330 mayseal the sides and the upper surfaces of the first and second chips 100and 200 of the stacked chip 1100. The molding layer 320 may seal theside and the upper surface of the underfill 310.

Referring to FIG. 6, the upper side of the second chip 200 of thestacked chip 1100 may be exposed by grinding the upper surface of thesealing portion 330. The upper surface of the sealing portion 330 may beleveled with the horizontal plane as that of the second chip 200. In thecase where the TSV is not formed in the second chip 200, the uppersurface of the second chip 200 may be the second surface, on which theintegrated circuit layer is not formed, of a semiconductor substrate,i.e., the silicon substrate, and thus, the silicon of the second surfaceof the semiconductor substrate may be exposed to the outside.

In the case where the upper surface of the second chip 200 of thestacked chip 1100 is exposed by grinding the upper surface of thesealing portion 330, when the chip-stacked semiconductor package, whichis completed hereafter, is mounted on a board substrate and then molded,an additional molding layer may be connected and bonded to the upperside of the second chip 200.

Referring to FIG. 7, the first connection unit 140 of the first chip 100of the stacked chip 1100 may be exposed to the outside by separating thesupporting carrier 800 from the base wafer 10 and removing the adhesivelayer 820 from the base wafer 110.

In an embodiment of the present inventive concept, the supportingcarrier 800 and the adhesive layer 820 may be removed separately, and,in some cases, the supporting carrier 800 and the adhesive layer 820 maybe removed simultaneously. For example, when the supporting carrier 800is formed with a transparent material, for example, a glass substrate,and the adhesive layer 820 is formed as a UV film, the supportingcarrier 800 and the adhesive layer 820 may be separated simultaneouslyfrom the base wafer 10 by UV irradiation.

Referring to FIG. 8, after inverting the base wafer 10 to which thestacked chip 1100 is bonded, a supporting substrate 900 is bondedthereto. Using an adhesive layer 920, the supporting substrate 900 isbonded to the second surface opposite to the first surface on which thefirst connection unit 140 of the first chip 100 is exposed. Thesupporting substrate 900 may be formed of silicon, germanium,silicon-germanium, gallium-arsenic (GaAs), glass, plastic, ceramic, orthe like. The adhesive layer 920 may be formed as an NCF, an ACF, a UVfilm, an instant adhesive, a thermosetting adhesive, a laser-settingadhesive, an ultrasonic-setting adhesive, an NCP, or the like. In anembodiment, the supporting substrate 900 may be formed as a glasssubstrate, and the adhesive layer 920 may be formed as a UV film.

Referring to FIG. 9, an electrical die sorting (EDS) test for thestacked chip 1100 is performed by using the supporting substrate 900.The EDS test may be performed by using a probe card 1500 or the like.The probe card 1500 may include a body portion 1520 and terminal pins1510. The terminal pins 1510, for example, may be pogo pins. The pogopins contact a corresponding first connection unit 140, and anelectrical signal is applied to pogo pins, and thus, the EDS test may beperformed.

It may be determined whether the stacked chip 1100 is good or defectivethrough the EDS test. If it is determined that the stacked chip 1100 isdefective through the EDS test, the defective stacked chip 1100 isscrapped. The chip-stacked semiconductor package according to thecurrent embodiment is a package in which chips passing the EDS test arestacked. Accordingly, the chip-stacked semiconductor package accordingto the current embodiment may be called a known good die stack (KGDS)package.

Referring to FIG. 10, after the EDS test, respective chip-stackedsemiconductor packages 1000 are separated from each other by sawingthrough the base wafer 10 and the sealing portion 330. A portion of theadhesive layer 920 may also be removed by sawing.

In FIG. 10, the base wafer 10 and the sealing portion 330 are sawedwithin the width CS1 of the first chip 100. Because the base wafer 10and the sealing portion 330 between the second chips 200 are sawedwithin the blade width S1, which is smaller than the size S2, a sawingprocess may be easily performed. In this case, the size of the secondchip 200, including a portion of the sealing portion 330, i.e., aportion of the underfill 310 may be increased from CS2 to CS2′, whereinCS2′ is slightly wider than CS2 due to the extra edge remaining aftersawing with the narrower blade.

Referring to FIG. 11, the chip-stacked semiconductor package 1000 iscompleted by removing the supporting substrate 900 and the adhesivelayer 920. The removals of the supporting substrate 900 and the adhesivelayer 920 may be performed sequentially or simultaneously. After thechip-stacked semiconductor package 1000 is completed through the sawingprocess described above, both sides of the first chip 100 are exposed.In this case, when the chip-stacked semiconductor packages 1000 aremounted on the board substrate and then molded, an additional moldinglayer may be attached and bonded to the sides of the first chip 100well. In an embodiment of the inventive concept, the method ofmanufacturing a chip-stacked semiconductor package includes the processof mounting the second chip 200 on the base wafer 10, which includes aplurality of first chips 100 in which the TSVs 130 are formed. In thisprocess, the size CS2 of the second chip 200 is prepared so as to besmaller than that of the first chip 100 by using a blade with a widerwidth S2 when a wafer that contains the second chip 200 is sawed torelease the second chip 200.

Accordingly, the underfill process may be easily performed even thoughthe size, for example, the width, of the scribe line region is narrow ina highly integrated wafer. In addition, sawing the base wafer 10 and thesealing portion 330 may be easily performed to obtain the chip-stackedsemiconductor package 1000.

According to the method of manufacturing a chip-stacked semiconductorpackage of the current embodiment, the EDS test is performed with thestacked chip 1100 is mounted on the base wafer 10, which includes theplurality of first chips 100 in which the TSVs 130 are formed.Accordingly, it may be determined whether the stacked chip 1100 is goodor defective without using a printed circuit board (PCB) substrate or aninterposer. Consequently, a good chip-stacked semiconductor package maybe obtained according to the current embodiment.

According to the method of manufacturing a chip-stacked semiconductorpackage of an embodiment, the upper surface of the stacked chip 1100,i.e., the upper surface of the second chip 200, may be exposed bysealing the stacked chip 1100 including the first chip 100 and thesecond chip 200 mounted on the base wafer 10, with the sealing portion330, and then by grinding the sealed stacked chip 1100. In addition,when the chip-stacked semiconductor package 1000 is completed throughthe sawing process after forming the stacked chip 1100 and the sealingportion 330 on the base wafer 10, both sides of the first chip 100 areexposed. In this case, when the chip-stacked semiconductor package 1000is mounted on a board substrate and then molded, an additional moldinglayer may be attached and bonded to the sides of the first chip 100well.

A structure and characteristics of the chip-stacked semiconductorpackage manufactured by the aforementioned method of manufacturing achip-stacked semiconductor package are described below with reference toFIG. 11.

In detail, the chip-stacked semiconductor package 1000 includes a goodstacked chip 1100 having a first chip 100, and a second chip 200, and asealing portion 330. The first chip 100 may include a body layer 110, alower insulation layer 120, a TSV 130, a first connection unit 140, aprotection layer 160, and an upper pad 170. A bump 144 is exposed to theoutside at the lower surface of the first chip 100, and a passivationlayer 124 of an active surface of the first chip 100 is also exposed tothe outside.

The second chip 200, similar to the first chip 100, may include a bodylayer 210, a lower insulation layer 220, and a second connection unit240. The second chip 200 may omit a TSV, as illustrated in FIG. 11, butmay include a TSV if desired. In the stacked chip 1100, an activesurface of the second chip 200 is mounted on an inactive surface of thefirst chip 100, and the second connection unit 240 of the second chip200 may be connected to the upper pad 170 of the first chip 100. Thus,the second chip 200 may be electrically connected to the TSV 130 of thefirst chip 100 through the second connection unit 240 of the second chip200.

The sealing portion 330 is filled in a connection portion between thefirst chip 100 and the second chip 200, i.e., a portion in which theupper pad 170 of the first chip 100 is connected to the secondconnection unit 240 of the second chip 200. The sealing portion portion330 also surrounds the sides of the second chip 200. Accordingly, thesealing portion 330 that is formed on the sides of the second chip 200and may be formed of the same material as the sealing portion 330 thatis formed in the connection portion between the first chip 100 and thesecond chip 200.

In an embodiment of the inventive concept, the upper surface of thesecond chip 200 is exposed to the outside, without a sealing portionformed thereon. The sides of the first chip 100 are also exposed to theoutside, without a sealing portion formed thereon. Thus, when thechip-stacked semiconductor package 1000 is mounted on a main chip or aboard substrate and then molded, an additional molding layer may beattached and bonded to the upper surface of the second chip 200 and thesides of the first chip 100 well.

The sides of the sealing portion 330 surrounding the sides of the secondchip 200 are vertically flush with the sides of the first chip 100. Thatis, the size CS2′ of the second chip 200 including the sealing portion330 is the same as the size CS1 of the first chip 100.

FIGS. 12 and 13 are cross-sectional views illustrating a method ofmanufacturing a chip-stacked semiconductor package, according to anembodiment of the inventive concept.

FIGS. 12 and 13 show an embodiment identical to that of FIGS. 1 through11, except for the process of sawing a base wafer and a sealing portion.

First, the manufacturing processes illustrated in FIGS. 1 through 9 areperformed. By performing the manufacturing processes, a plurality ofsecond chips 200, sealed by a sealing portion 330, are located on asupporting substrate 900 and are connected to a plurality of first chips100 included in a base wafer 10, respectively.

Referring to FIG. 12, the base wafer 10 and the sealing portion 330 aresawed on the basis of a width CS2 of the second chip 200 to provide eachchip-stacked semiconductor package 1000 a. As stated above, S2 may be ablade width, and the base wafer 10 may be sawed on the basis of theblade width S2. In this case, the size of the first chip 100 is the samefrom CS1 at the top surface to CS1′ at the bottom surface.

Referring to FIG. 13, each chip-stacked semiconductor package 1000 a iscompleted by removing the supporting substrate 900 and an adhesive layer920. A removal of the supporting substrate 900 and the adhesive layer920 may be sequentially performed or simultaneously performed. Aftereach chip-stacked semiconductor package 1000 a is formed through thesawing process of FIG. 12, the sides of the first chip 100 and the sidesof the second chip 200 are exposed as illustrated in FIG. 13.

According to the method of manufacturing a chip-stacked semiconductorpackage of an embodiment illustrated in FIGS. 12 and 13, similar to theembodiment of FIGS. 1 through 11, the size of the second chip 200 isprepared so as to be smaller than that of the first chip 100 byenlarging the blade width S2 when a wafer including the second chip 200is sawed. Thus, sawing the base wafer 10 and the sealing portion 330 maybe easily performed to obtain the chip-stacked semiconductor package1000 a.

According to the method of manufacturing a chip-stacked semiconductorpackage of an embodiment illustrated in FIGS. 12 and 13, similar to theembodiment of FIGS. 1 through 11, it may be determined whether a stackedchip 1100 is good or defective without using a printed circuit board(PCB) substrate or an interposer. Consequently, a chip-stackedsemiconductor package having the stacked chip 1100 which is determinedto be good or defective may be obtained.

According to the method of manufacturing a chip-stacked semiconductorpackage of an embodiment illustrated in FIGS. 12 and 13, similar to theembodiment of FIGS. 1 through 11, the upper surface of the second chip200 and the sides of the first chip 100 are exposed. In addition, thesides of the second chip 200 are also exposed. In this case, when thechip-stacked semiconductor package 1000 a is mounted on a boardsubstrate and then molded, an additional molding layer may be attachedand bonded to the sides of the first chip 100 and the sides of thesecond chip 200 well.

Below, a structure and characteristics of the chip-stacked semiconductorpackage manufactured by the aforementioned method of manufacturing achip-stacked semiconductor package are described with reference to FIG.13.

In detail, the chip-stacked semiconductor package 1000 a of FIG. 13 isthe same as the chip-stacked semiconductor package 1000 of FIG. 11except that the sides of the second chip 200 are exposed.

The sealing portion 330 is filled in a connection portion between thefirst chip 100 and the second chip 200, i.e., a portion in which theupper pad 170 of the first chip 100 is connected to the secondconnection unit 240, and the sealing portion 330 is not formed on thesides of the second chip 200. However, the sealing portion 330 is notformed on the sides of the first chip 100, and thus, the sides of thefirst chip 100 are exposed.

Thus, as stated above, when the chip-stacked semiconductor package 1000a is mounted on a board substrate and then molded, an additional moldinglayer may be attached and bonded to the upper surface of the second chip200 and the sides of the first chip 100 well.

As stated above, in an embodiment, the sides of the second chip 200 arevertically flush with the sides of each of the first chips 100. That is,the size CS2 of the second chip 200 is the same as the size CS1 of thefirst chip 100.

FIGS. 14A through 14F are cross-sectional views illustrating a method ofmanufacturing the base wafer 10 including the first chip 100 used in themethod of manufacturing a chip-stacked semiconductor package accordingto an embodiment of the inventive concept. FIGS. 14A through 14Fillustrate only the first chip 100 of the base wafer 10 of theembodiment.

Referring to FIG. 14A, an integrated circuit layer 150 is formed on afirst surface F1 of a semiconductor substrate 102, and then aninterlayer insulation layer 104, covering the integrated circuit layer150, is formed on the first surface F1 of the semiconductor substrate102. The semiconductor substrate 102 has a second surface F2 opposite tothe first surface F1. The semiconductor substrate 102 and the interlayerinsulation layer 104 constitute the body layer 110 of the first chip100.

The semiconductor substrate 102 may be formed with a monocrystallinewafer. The integrated circuit layer 150 may include various circuitdevices, for example, transistors and/or capacitors, depending on thekind of chips.

The interlayer insulation layer 104 may be formed using an insulationdeposition process, for example, a CVD process. Because the interlayerinsulation layer 104 may not be formed flat depending on the profile ofthe integrated circuit layer 150, a planarization may be performed afterthe deposition process. The planarization may be performed by using achemical mechanical polishing (CMP) process or an etch-back process.

Referring to FIG. 14B, a trench is formed in the interlayer insulationlayer 104 and the semiconductor substrate 102, and then a spacerinsulation layer 135 and a TSV 130 are formed within the trench. In moredetail, a resist pattern (not shown) is formed on the interlayerinsulation layer 104, and then using the resist pattern, the interlayerinsulation layer 104 and the semiconductor substrate 102 arecontinuously etched through an etch process. In result, the trench isformed in the interlayer insulation layer 104 and the semiconductorsubstrate 102. Alternatively, the trench may be formed using a laserdrilling process.

The trench may be formed so as not to completely penetrate through thesemiconductor substrate 102 in consideration of grinding the secondsurface F2 of the semiconductor substrate 102 during further processing.The trench may have various shapes depending on the etch conditions orthe drilling conditions. For example, the trench may have a relativelyuniform cylindrical shape or a shape in which the width of the trenchdecreases with depth into the semiconductor substrate 102, i.e., theat=s the trench approaches the second surface F2 of the semiconductorsubstrate 102.

Next, the spacer insulation layer 135 is formed in the trench. Forexample, the spacer insulation layer 135 may include an insulationlayer, for example, an oxide layer, a nitride layer, a polymer layer, ora Parylene® or other poly(p-xylylene) polymer layer, and may be formedusing a low temperature deposition process, for example, a lowtemperature chemical vapor deposition (LTCVD) process, a polymerspraying process, or a low temperature physical vapor deposition (PVD)process.

In an embodiment of the inventive concept, the TSV 130 is formed tocompletely cover the spacer insulation layer 135. For example, the TSV130 may be embodied by forming a barrier metal layer 134 on the spacerinsulation layer 135 in the trench and then forming an interconnectionmetal layer 132 on the barrier metal layer 134. The barrier metal layer134 may include a composition selected from the group consisting oftitanium (Ti), tantalum (Ta), titanium nitride (TiN), and tantalumnitride (TaN) or may include a stacked structure including two or moreof Ti, Ta, TiN, and TaN. The interconnection metal layer 132 may includea composition selected from tungsten (W), aluminum (Al), and copper (Cu)or may include a stacked structure including two or more of W, Al, andCu. The barrier metal layer 134 and the interconnection metal layer 132may be formed using a CVD process, a plasma-enhanced chemical vapordeposition (PECVD) process, a high density plasma-chemical vapordeposition (HDP-CVD) process, a sputtering process, a metal organicchemical vapor deposition (MOCVD) process, or an atomic layer deposition(ALD) process. The interconnection metal layer 132 may be formed using aplating process, and in this case, a plating layer may be formed afterforming a seed layer. Here, Cu may be used to form the interconnectionmetal layer 132 by using the plating process.

A planarization process may be performed after filling the trench. Forexample, the planarization may be performed using a CMP process or anetch-back process so that the spacer insulation layer 135 and the TSV130 remain only inside the trench. A preheat process and a buffering CMPprocess may be performed after the planarization by the CMP process. Ametal contact 152 may be formed before forming the TSV 130 or afterforming the TSV 130.

Referring to FIG. 14C, a multilayer interconnection pattern 180connected with the TSV 130, an inter-metallic insulation layer 122, anda passivation layer 124 may be formed on the planarized surface. Themultilayer interconnection pattern 180 may be formed by repeatingprocesses of forming a stacked structure including interconnection lines181, 185, and 189 and vertical plugs 183 and 187. The inter-metallicinsulation layer 122 may have a multilayer structure depending on thestacked structure of the multilayer interconnection pattern 180

The multilayer interconnection pattern 180 may be formed using amaterial film deposition and patterning process or may be formed using adamascene process. For example, if the multilayer interconnectionpattern 180 includes aluminum (Al) and/or tungsten (W), the multilayerinterconnection pattern 180 may be formed using the material filmdeposition and patterning process. On the other hand, if the multilayerinterconnection pattern 180 includes copper Cu, the multilayerinterconnection pattern 180 may be formed using the damascene process.

Referring to FIG. 14D, a first connection unit 140, which is connectedto the interconnection line 189 of the multilayer interconnectionpattern 180, may be formed on the passivation layer 124. The firstconnection unit 140 may be completed by forming a trench in thepassivation layer 124 and forming a bump pad 142 to fill the trench, andthen by forming a bump 144 on the bump pad 142.

Referring to FIG. 14E, a supporting substrate 700 is bonded to an uppersurface of a chip in which the first connection unit 140 is formed,through an adhesive layer 720. The spacer insulation layer 135 and theTSV 130 are exposed by removing a portion of the semiconductor substrate102 of a predetermined thickness from the second surface F2 of thesemiconductor substrate 102. As illustrated in FIG. 14E, the spacerinsulation layer 135 and the TSV 130 may be exposed to project from thesecond surface F2 of the semiconductor substrate 102.

Removal of the portion of the semiconductor substrate 102 may beperformed using one or more processes selected from grinding, CMP,isotropic etching, and anisotropic etching. For example, a significantportion of the semiconductor substrate 102 to be removed may be removedby using CMP, and then the semiconductor substrate 102 may be recessedfrom the bottom surface of the spacer insulation layer 135 and the TSV130 by using isotropic etching, i.e., wet etching.

Referring to FIG. 14F, a protection layer 160 is formed on the secondsurface F2 of the semiconductor substrate 102, and an upper pad 170 isformed on the protection layer 160 to connect to the TSV 130. Afterforming the upper pad 170, a chip including the TSV 130 having avia-middle structure which is the same as that of the first chip 100 ofFIG. 11, by removing the supporting substrate 700, may be formed byremoving the supporting substrate 700. The TSV 130 of the currentembodiment may be formed with the via-middle structure in which the TSVis formed before forming a multilayer interconnection pattern afterforming an integrated circuit layer.

FIG. 15 is a cross-sectional view of a base wafer including a first chip100 a used in a method of manufacturing a chip-stacked semiconductorpackage, according to an embodiment of the inventive concept.

The first chip 100 a may have a structure similar to that of the firstchip 100 of FIG. 14, except for the structure of a TSV portion. Thus,for convenience of explanation, portions stated in the above explanationof FIGS. 14A through 14F will be omitted or briefly stated.

In detail, in the first chip 100 a of an embodiment, a TSV 130 a may beformed with a via-last structure. Thus, the TSV 130 a may be directlyconnected to a bump pad 142 a of a first connection unit 140 a through asemiconductor substrate 102, an interlayer insulation layer 104, aninter-metallic insulation layer 122, and a passivation layer 124. TheTSV 130 a and a spacer insulation layer 135 a on the sidewalls of theTSV 130 a are the same as those illustrated in FIGS. 14A through 14F.

FIGS. 16A and 16B are cross-sectional views illustrating a method ofmanufacturing a second chip used in a method of manufacturing achip-stacked semiconductor package, according to an embodiment of theinventive concept.

Referring to FIG. 16A, a wafer 20 that includes a plurality of secondchips 200 is prepared. The wafer 20 may be bonded to a supportingsubstrate 840 through an adhesive layer 860. In the wafer 20, a size ofa chip region is indicated by CR1, similar to the first chip 100. Thesize CR1 of the chip region may be defined by a width or a lengththereof. A size of a scribe line region between the second chips 100 isindicated by SR1, similar to the first chip 100. The size SR1 of thescribe line region may be along a width or a length of the chips 200.

The supporting substrate 840, as stated above, may be formed of silicon,germanium, silicon-germanium, gallium-arsenic (GaAs), glass, plastic,ceramic, or the like. The adhesive layer 860 may be formed as an NCF, anACF, an instant adhesive, a thermosetting adhesive, a laser-settingadhesive, an ultrasonic-setting adhesive, an NCP, or the like. The wafer20 may be bonded so that a first connection unit 240 faces thesupporting substrate 840.

Referring to FIG. 16B, the second chips 200 are separated from eachother by sawing the scribe line region of the wafer 20. The sizes of thesecond chips 200 are indicated as “CS2”. The size CS2 of the secondchips 200 may be defined by a width or a length. A size of a regionsawed by a blade inside the scribe line region is indicated as “S2”. Thesize S2 may be along a width or a length. The size S2 may be a width ofthe blade.

FIGS. 17A and 17B are cross-sectional views illustrating a method ofmanufacturing a second chip used in a method of manufacturing achip-stacked semiconductor package, according to an embodiment of theinventive concept.

Second chips 200 a illustrated in FIGS. 17A and 17B are the same as thesecond chips 200 illustrated in FIGS. 16 a and 16 b, except that TSVs230 are formed in the chips of FIGS. 17A and 17B.

Referring to FIG. 17A, a wafer 20 is prepared, including the secondchips 200 a in which the TSVs 230 are formed. The wafer 20 may be bondedto a supporting substrate 840 through an adhesive layer 860. The wafer20, as illustrated in FIGS. 17A and 17B, may be manufactured by usingthe same process as that of manufacturing the base wafer 10.

Referring to FIG. 17B, the second chips 200 a are separated from eachother by sawing along a scribe line region of the wafer 20. The sizes ofthe second chips 200 a are indicated as “CS2”. The size CS2 of each ofthe second chips 200 a may be defined by a width or a length. A size ofa region sawed by a blade inside the scribe line region is indicated as“S2”. The size S2 may be along a width or a length.

FIGS. 18 and 19 are cross-sectional views illustrating a method ofmanufacturing a chip-stacked semiconductor package, according to anembodiment of the inventive concept.

The embodiment of FIGS. 18 and 19 is the same as the aforementionedembodiments except that an adhesive layer 420 is formed on a base wafer10 and the underfill 310 is not formed on the base wafer 10.

Referring to FIG. 18, the adhesive layer 420, covering a protectionlayer 160 and an upper pad 170, is formed on the base wafer 10, similarto that illustrated in FIG. 1. The adhesive layer 420 may be an NCF oran ACF. In an embodiment, an NCF may be used. The adhesive layer 420 maybe formed by bonding the NCF to the base wafer 10 after forming theprotection layer 160 and the upper pad 170.

The NCF is a film having insulation characteristics as a generaladhesive film. When the NCF is used, a second chip 200 may be stacked ona first chip 100 by a pressuring method. The ACF has a structure inwhich conductive particles are distributed inside an insulation adhesivefilm, and may have anisotropic electrical characteristics in whichelectric current is applied only in an electrode direction, i.e., in avertical direction, and is insulated in a direction between an electrodeand another electrode, i.e., in a horizontal direction, during bonding.In the ACF, when an adhesive is melted by applying heat and pressure,conductive particles are arranged between electrodes opposite eachother, and thus, conductivity occurs. On the other hand, the adhesive isfilled between adjacent electrodes, and thus, the adjacent electrodesare insulated from each other.

Referring to FIG. 19, a stacked chip 1100 is formed by stacking thesecond chip 200 on the adhesive layer 420 on the base wafer 10 includingthe first chip 100, by using the same method as that of FIG. 3. Thestack is accomplished by bonding a second connection unit 240 of thesecond chip 200 to an upper pad 170 of the first chip 100 using apressure method.

In the case of stacking the second chip 200 on the first chip 100, aconnection portion between the first chip 100 and the second chip 200 ofthe stacked chip 1100 is not filled with the underfill but is filledinstead with the adhesive layer 420. In this case, the method ofmanufacturing a chip-stacked semiconductor package is simplified becausethe underfill process may be omitted.

Then, a chip-stacked semiconductor package is completed through amolding and sawing process by using the manufacturing process describedabove, for example, by using the methods described with reference toFIGS. 5 through 11 and FIGS. 12 and 13.

FIGS. 20 and 21 are cross-sectional views illustrating a method ofmanufacturing a chip-stacked semiconductor package, according to anembodiment of the inventive concept.

The embodiment of FIGS. 20 and 21 is the same as that of FIGS. 18 and 19except that the underfill 310 is not formed and a sealing portion 330 isformed with a molding layer 320.

First, the manufacturing processes of FIGS. 1 through 3 are performed.By these processes, a second chip 200 is stacked on an adhesive layer420 on a base wafer 10 including a first chip 100, and thus a stackedchip 1100 is formed.

Referring to FIG. 20, the sealing portion 330 is formed by forming themolding layer 320 sealing the sides and the upper surface of the secondchip 200, filling a connecting portion between the first chip 100 andthe second chip 200 of the stacked chip 1100.

The molding layer 320 may fill the connecting portion between the firstchip 100 and the second chip 200, i.e., a portion in which an upper pad170 of the first chip 100 is connected to a second connection unit 240of the second chip 200. The molding layer 320, as stated above, may beformed with a polymer such as a resin. For example, the molding layer320 may be formed with an EMC. The sealing portion 330 may seal thesides and the upper surface of the first and second chips 100 and 200 ofeach of the stacked chips 1100.

Referring to FIG. 21, the upper surface of the second chip 200 of eachof the stacked chips 1100 may be exposed by grinding the upper surfaceof the sealing portion 330. In this case, the stacked chips 1100 aresealed with the sealing portion 330 including the molding layer 320. Thesealing portion 330 may seal the sides of the first and second chips 100and 200 of each of the stacked chips 1100.

Then, as illustrated in the preceding manufacturing processes, forexample, as illustrated in FIGS. 7 through 11 and FIGS. 12 and 13, achip-stacked semiconductor package is completed through a test processand a sawing process.

FIG. 22 is a cross-sectional view illustrating a method of manufacturinga chip-stacked semiconductor package, according to an embodiment of theinventive concept.

The embodiment of FIG. 22 is the same as the aforementioned embodimentsexcept that a stacked chip 1100 a is formed by stacking a plurality ofsecond chips 200 on each first chip 100 of a base wafer 10,respectively.

Referring to FIG. 22, the stacked chip 1100 a is formed by stacking atleast two second chips 200 on each of the first chips 100 of the basewafer 10. A single second chip 200 may be stacked on each of the firstchips 100 of the base wafer 10, and a second chip set of two or moresecond chips 200 may be stacked on each of the first chips 100 of thebase wafer 10. For example, a chip-stacked semiconductor package such asthe chip-stacked semiconductor package 1000 of FIG. 11 or thechip-stacked semiconductor package 1000 a of FIG. 13 may be stacked onthe first chip 100.

A connection portion between the first chip 100 and the second chip 200may be filled with an adhesive layer 420 such as the NCF. A connectionportion between the second chips 200 may be also filled with theadhesive layer 420 such as the NCF. The adhesive layer 420 may not beformed on upper surfaces of the highest second chips (Nth chips shown inFIG. 22), and the TSVs are not formed in the highest second chip.

As stated above, a connection portion between the first chip 100 and thesecond chip 200 may be filled with a sealing portion 330 such as theunderfill 310 or the molding layer 320.

FIGS. 23 and 24 are cross-sectional views of chip-stacked semiconductorpackages 10000 and 10000 a according to embodiments of the inventiveconcept.

Referring to FIG. 23, the chip-stacked semiconductor package 10000 mayinclude a main chip 2000 and an upper semiconductor package 1000. Theupper semiconductor package 1000 may be the same as that of thechip-stacked semiconductor package of FIG. 11. Thus, an explanation forelements of the upper semiconductor package 1000 will be omitted orbriefly described.

The upper semiconductor package 1000 is stacked on the main chip 2000,and is sealed with a second sealing portion 340. A first sealing portion330 including an underfill 310 is formed on the sides of a second chip200, and the second sealing portion 340 is formed on the sidewalls ofthe first sealing portion 330 to seal the upper semiconductor package1000. As stated above, the second sealing portion 340 may be formed witha mold layer.

The size of the main chip 2000 may be larger than those of the first andsecond chips 100 and 200 included in the upper semiconductor package1000.

A size of a horizontal section of the main chip 2000 may be the same asthat of a total horizontal section of the upper semiconductor package1000, i.e., a horizontal section including the second sealing portion340. The upper semiconductor package 1000 may be mounted on the mainchip 2000 through an adhesive layer 2400. Thus, the lower surface of thesecond sealing portion 340 of the upper semiconductor package 1000 maybe bonded to the outskirts of the upper surface of the main chip 2000through the adhesive layer 2400.

The main chip 2000, similar to a memory chip, may include a body layer2100, a lower insulation layer 2200, a passivation layer 2300, a TSV2500, a third connection unit 2600, a protection layer 2750, and anupper pad 2700. An integrated circuit layer and a multilayerinterconnection pattern inside the lower insulation layer 2200 and thepassivation layer 2300 may be formed differently depending on a type ofthe main chip 2000. The main chip 2000 may be a logic chip, for example,a central processing unit (CPU), a controller, or an applicationspecific integrated circuit (ASIC).

The number of TSVs 2500 and the number of upper pads 2700 correspondingto the TSV 2500 may correspond to the number the first connection units140 of the first chip 100 of the upper semiconductor package 1000 whichis stacked on the main chip 2000. If desired, the number of the TSV 2500may be different from, for example, larger than, that of the firstconnection unit 140.

The third connection unit 2600 formed in a lower surface of the mainchip 2000 may include a bump pad 2610 and a bump 2620, and the number ofthird connection units 2600 may be less than that of TSVs 2500. In thiscase, a TSV that does not have a corresponding third connection unit2600 may be connected to one third connection unit 2600 through amultilayer interconnection pattern. That is, two or more TSVs may beconnected to one third connection unit 2600 through a multilayerinterconnection pattern.

The size of the third connection unit 2600 formed in the main chip 2000is larger than that of the first connection unit 140 of the uppersemiconductor package 1000. The reason is that wirings formed in a boardsubstrate (not shown) on which the main chip 2000 is mounted aredifficult to arrange at high density due to standardization of thewirings or physical characteristics of the board substrate. For thisreason, the TSVs 2500 may not correspond to the third connection units2600, respectively.

The chip-stacked semiconductor package 10000 a according to theembodiment of FIG. 24 may have a similar structure to that of thechip-stacked semiconductor package 10000 of FIG. 23, except for theupper semiconductor package 1000. Thus, for convenience of explanation,portions stated in the above explanation of FIG. 23 will be omitted orbriefly stated.

Referring to FIG. 23, in the chip-stacked semiconductor package 10000 aof the current embodiment, the upper semiconductor package 1000 a may bethe same as the chip-stacked semiconductor package 1000 a of FIG. 13.Thus, the sides of the second chip 200 of the upper semiconductorpackage 1000 a are exposed, and then the upper semiconductor package1000 a is sealed by forming the second sealing portion 340 on the sidesof the second chip 200.

FIGS. 25 and 26 are cross-sectional views of chip-stacked semiconductorpackages 20000 and 20000 a according to embodiments of the inventiveconcept.

The chip-stacked semiconductor package 20000 of FIG. 25 may include aboard substrate 3000, a main chip 2000, an upper semiconductor package1000, an underfill 4000, and a third sealing portion 5000. Thechip-stacked semiconductor package 20000 a of FIG. 26 may have a similarstructure to that of the chip-stacked semiconductor package 20000,except for an upper semiconductor package 1000 a.

The structures of the upper semiconductor package 1000 or 1000 a and themain chip 2000 may be the same as those illustrated in FIGS. 23 and 24.Accordingly, detailed explanations for the elements of the uppersemiconductor package 1000 or 1000 a and the main chip 2000 will beomitted. The upper semiconductor package 1000 or 1000 a and the mainchip 2000 may be mounted on the board substrate 2000 through a thirdconnection unit 2600.

The board substrate 3000 may include a body layer 3100, an upperprotection layer 3200, a lower protection layer 3300, an upper pad 3400,and a fourth connection unit 3500. A plurality of interconnectionpatterns may be formed in the body layer 3100. The upper protectionlayer 3200 and the lower protection layer 3300 may have a function forprotecting the body layer 3100, and, for example, may be formed withsolder resist. The board substrate 3000 is standardized, as statedabove, and has a limitation in reduction of size. Accordingly,additional explanation for the board substrate 3000 will be omitted.

The third sealing portion 5000 seals the sides and the upper surface ofthe upper semiconductor package 1000 or 1000 a and the sides of the mainchip 2000, and the lower side of the third sealing portion 5000 may bebonded to outside of the board substrate 3000. The underfill 4000 fillsa connection portion between the main chip 2000 and the board substrate3000. In the current embodiment, the underfill 4000 is formed in theconnection portion between the main chip 2000 and the board substrate3000. However, if the third sealing portion 5000 is formed through anMUF process, the underfill 4000 may be omitted.

FIG. 27 is a block diagram illustrating a memory card 7000 including achip-stacked semiconductor package according to an embodiment of theinventive concept.

Referring to FIG. 27, a controller 7100 and a memory 7200 may bedisposed to send/receive electric signals to/from each other. Forexample, when the controller 7100 sends a command to the memory 7200,the memory 7200 may send data. The controller 7100 and/or the memory7200 may include a chip-stacked semiconductor package according to anembodiment of the inventive concept. The memory 7200 may include memoryarrays (not shown) or memory array banks (not shown), all of which areknown in the art.

The memory card 7000 may be used in memory devices as a memory card, forexample, such as a memory stick card, a smart media (SM) card, a securedigital (SD) card, a mini SD card, a micro SD card or a multi media card(MMC).

FIG. 28 is a schematic block diagram of a system 8000 including achip-stacked semiconductor package according to an embodiment of theinventive concept.

Referring to FIG. 28, the system 8000 may include a controller 8100, aninput/output device 8200, a memory 8300, and an interface 8400. Thesystem 8000 may be a mobile system or a system that transmits orreceives data. The mobile system may be a personal digital assistant(PDA), a portable computer, a web tablet, a wireless phone, a mobilephone, a digital music player, or a memory card.

The controller 8100 executes a software program and controls the system8000. The controller 8100 may be a microprocessor, a digital signalprocessor, a microcontroller, or the like. The input/output device 8200may be used to input or output data of the system 8000.

The system 8000 is connected to an external apparatus, for example, apersonal computer or a network, using the input/output device 8200, tosend/receive data to/from the external apparatus. The input/outputdevice 8200 may be a keypad, a keyboard, or a display. The memory 8300may store codes and/or data for operating the controller 8100 and/or maystore data processed by the controller 8100. The controller 8100 and thememory 8300 may include a chip-stacked semiconductor package accordingto an embodiment of the inventive concept. The interface 8400 may be adata transmission path between the system 8000 and an externalapparatus. The controller 8100, the input/output device 8200, the memory8300, and the interface 8400 may communicate with one another by a bus8500.

For example, the system 8000 may be used for a mobile phone, an MP3player, a navigation system, a portable multimedia player (PMP), a solidstate disk (SSD), or a household appliance.

The foregoing description is illustrative of exemplary embodiments ofthe present inventive concept and is not to be construed as limitingthereof. Although exemplary embodiments have been described, those ofordinary skill in the art will readily appreciate that manymodifications are possible in the exemplary embodiments withoutmaterially departing from the novel teachings and advantages of theseexemplary embodiments. Accordingly, all such modifications are intendedto be encompassed within the scope of the claims. Exemplary embodimentsare defined by the following claims, with equivalents of the claimsintended to be included therein.

What is claimed is:
 1. A method of manufacturing a chip-stackedsemiconductor package, the method comprising: providing a base waferincluding a plurality of first chips each having a through-silicon via(TSV) and a first connection unit including a bump pad and a bumpelectrically connected to the through-silicon via (TSV); bonding thebase wafer including the plurality of first chips to a supportingcarrier and covering the first connection unit with the supportingcarrier; providing a plurality of second chips; and forming stackedchips by bonding the plurality of second chips to the plurality of firstchips.
 2. The method of claim 1, further comprising, sealing the stackedchips with a sealing portion and separating the stacked chips from eachother.
 3. The method of claim 1, further comprising, forming aprotection layer and a conductive pad connected to the TSV on the basewafer and bonding a non-conductive film (NCF) or an anisotropicconductive film (ACF) to the protection layer and the conductive pad,and the forming of the stacked chips comprises bonding the plurality ofsecond chips to the plurality of first chips through the NCF or the ACF.4. The method of claim 1, further comprising, filling a connectionportion between the first chips and the second chips with an underfill.5. The method of claim 1, wherein, when the plurality of second chipsare bonded to the plurality of first chips, at least two second chipsare stacked on one first chip to provide stacked chips each comprisingat least three chips.
 6. The method of claim 1, wherein the base waferis prepared by a method comprising: providing a semiconductor substratehaving a first surface and a second surface opposite the first surface;forming the TSV through the semiconductor substrate; exposing the TSV tothe second surface; and forming a protection layer and a conductive padconnected to the TSV on the second surface, wherein, in the bonding ofthe base wafer, the first connection unit of the first chip faces thesupporting carrier.
 7. The method of claim 1, wherein the plurality ofsecond chips each comprise a TSV.
 8. The method of claim 1, wherein eachof the plurality of second chips comprises a second connection unitelectrically connected to an integrated circuit layer thereof, wherein,in the forming of the stacked chips, the second connection unit iselectrically connected to the TSV.
 9. The method of claim 2, furthercomprising, before the separating of the stacked chips, exposing uppersurfaces of the second chips by grinding an upper portion of the sealingportion.
 10. The method of claim 9, further comprising: after theexposing of the upper surfaces of the second chips, removing thesupporting carrier; bonding a supporting substrate to the upper portionof the sealing portion; and performing an electrical die sort (EDS) testfor the stacked chips.
 11. The method of claim 9, further comprising:after the separating of the stacked chips, removing the supportingsubstrate; and mounting a separated stacked chip on a main chip.
 12. Themethod of claim 11, wherein a second TSV and a third connection unitconnected to the second TSV are formed in the main chip, and the mainchip is mounted on a board substrate through the third connection unit.13. A method of manufacturing a chip-stacked semiconductor package, themethod comprising: preparing a base wafer including a plurality of firstchips each having a first size defined by a first length and a firstwidth, each of the plurality of first chips having a through-silicon via(TSV) and a first connection unit including a bump pad and a bumpelectrically connected to the through-silicon via (TSV); bonding thebase wafer to a supporting carrier and covering the first connectionunit with the supporting carrier; and forming stacked chips by bonding aplurality of second chips to the plurality of first chips, the pluralityof second chips each having a second size defined by a second length anda second width, that are shorter and narrower than the first length andthe first width, respectively.
 14. The method of claim 13, furthercomprising, sealing the stacked chips with a sealing portion; andseparating the stacked chips from each other by sawing the base waferand the sealing portion exposing one or more sides of each of the firstchips and one or more sides of each of the second chips.
 15. The methodof claim 14, wherein after separating the stacked chips from each otherthe sealing portion remains to cover a connection portion between thefirst chips and the second chips and the sides of the second chips. 16.The method of claim 14, wherein the base wafer and the sealing portionare sawed along lines so as to separate each of the first chips andexposing a sealing portion covering the sides of each of the secondchips.
 17. The method of claim 14, wherein the base wafer and thesealing portion are sawed along lines so as to separate each of thesecond chips and exposing the sides of the first chips and the secondchips.
 18. A method of manufacturing a chip-stacked semiconductorpackage, the method comprising: preparing a base wafer including aplurality of first chips each having a through silicon via (TSV) by amethod including: providing a semiconductor substrate having a firstsurface and a second surface opposite the first surface; forming the TSVthrough the semiconductor substrate; exposing the TSV to the secondsurface; and forming a protection layer and a conductive pad connectedto the TSV on the second surface, wherein, in the bonding of the basewafer, the first connection unit of the first chip faces the supportingcarrier; and forming stacked chips by bonding one of a plurality ofsecond chips to each of the plurality of first chips.
 19. The method ofclaim 18, wherein the preparing of the base wafer further comprises:bonding a non-conductive film (NCF) or an anisotropic conductive film(ACF) to the protection layer and the conductive pad, wherein theforming of the stacked chips comprises bonding the plurality of secondchips to the plurality of first chips through the NCF or the ACF. 20.The method of claim 18, wherein each of the plurality of second chipscomprises a second connection unit electrically connected to anintegrated circuit layer thereof; and wherein the second connection unitis electrically connected to the TSV.